Three-dimensional contactless non-volatile memory cell

Details Three-dimensional contactless non-volatile memory cell Three-dimensional contactless non-volatile memory cell

1990-02-22

1992-05-05

Mintel, William

357 236, 357 55, 357 56, 357 45, H01L 2968, H01L 2978, H01L 2906, H01L 2710

Patent

active

051112701

ABSTRACT:
A three-dimensional contactless non-volatile memory cell is described. The memory cell comprises a substrate, source/drain regions that function as buried bit-lines and define a channel therebetween, a floating gate disposed above and insulated from the channel, and a control gate disposed above and insulated from the floating gate. The floating gate is formed to an adequate thickness so as to allow capacitive coupling to the control gate along the vertical regions of the floating gate. Thus, a reduction in minimum cell size can be achieved by decreasing the lateral dimensions of the cell without compromising the total capacitive coupling area. Subsequently, a substantial reduction in the total array area and a corresponding increase in device density can be realized. Further features of the invention include elimination of thick oxide regions in the array and improved gate oxide quality.

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