Three-dimensional cascaded power distribution in a...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

Reexamination Certificate

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C257S777000, C257SE27026

Reexamination Certificate

active

11496120

ABSTRACT:
An IC structure having reduced power loss and/or noise includes two or more active semiconductor regions stacked in a substantially vertical dimension, each active semiconductor region including an active layer. The IC structure further includes two or more voltage supply planes, each of the voltage supply planes corresponding to a respective one of the active layers.

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patent: 2007/0297156 (2007-12-01), Hosomi

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