Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2008-07-22
2008-07-22
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S777000, C257SE27026
Reexamination Certificate
active
11496120
ABSTRACT:
An IC structure having reduced power loss and/or noise includes two or more active semiconductor regions stacked in a substantially vertical dimension, each active semiconductor region including an active layer. The IC structure further includes two or more voltage supply planes, each of the voltage supply planes corresponding to a respective one of the active layers.
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Bernstein Kerry
Coteus Paul W.
Emma Philip George
Hartstein Allan Mark
Kosonocky Stephen V.
Ho Tu-Tu V
International Business Machines - Corporation
Ryan & Mason & Lewis, LLP
Tuchman Ido
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