Three-dimensional capacitor structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S307000, C257S308000, C257S309000

Reexamination Certificate

active

11468296

ABSTRACT:
A three-dimensional capacitor structure has a first conductive layer, a second conductive layer disposed above the first conductive layer, and a plug layer disposed therebetween. The first conductive layer includes a plurality of grid units arranged in a matrix, where in odd rows of the matrix, a first conductive grid is located in each odd column, and a first circular hole is located in each even column. Additionally, a first conductive island is located within each first circular hole. The pattern of the second conductive grids, the second circular holes, and the second conductive island of the second conductive layer is mismatched with that of the first conductive layer. The plug layer has a plurality of plugs disposed in between each first conductive island and each second conductive grid, and in between each first conductive grid and each second conductive island.

REFERENCES:
patent: 5583359 (1996-12-01), Ng et al.
patent: 6570210 (2003-05-01), Sowlati et al.
patent: 6743671 (2004-06-01), Hu et al.
patent: 6822312 (2004-11-01), Sowlati et al.
patent: 7061746 (2006-06-01), Abdallah et al.
patent: 7161204 (2007-01-01), Lin et al.
patent: 2006/0226462 (2006-10-01), Ota
patent: 2007/0117340 (2007-05-01), Steltenpohl

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