Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2000-06-30
2002-12-31
Lee, Eddie (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S040000, C257S310000
Reexamination Certificate
active
06501111
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates generally to semiconductor memory devices and methods for fabricating the same. More particularly, the present invention relates to a three-dimensional (3D) memory device having polysilicon diode isolation elements for chalcogenide memory cells and method for fabricating the same.
BACKGROUND
Prior art memory devices use two-dimensional (2D) memory cell arrays, which are formed on a top surface of a silicon substrate. The memory cells. are matrixed in a 2D array in the X-Y plane and thus addressed by X and Y address lines. The prior art memory devices also include isolation elements to select the memory cells. The isolation elements are generally made of metal oxide semiconductor (MOS) transistors.
A disadvantage with the prior art memory devices is that they are limited to the X-Y plane thus limiting memory density for such devices. That is, the MOS transistor isolation elements require physical use of the top surface of the silicon substrate to select a memory cell which limits memory cell arrays being formed in the X-Y plane on the silicon substrate.
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Fenty Jesse A.
Intel Corporation
Lee Eddie
Martinez Anthony M.
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