Three device BICMOS gain cell

Details Three device BICMOS gain cell Three device BICMOS gain cell

1997-08-22

1999-06-01

Nelms, David

Static information storage and retrieval

Systems using particular element

Semiconductive

365149, 365177, 36523005, G11C 1134

Patent

active

059094001

ABSTRACT:
A nondestructive read, three device BICMOS gain cell for a DRAM memory having two FETs and one bipolar device. The gain cell has an improved access time (less latency), can operate for longer periods of time before a refresh operation is required, requires a smaller storage capacitance than a traditional DRAM cell, and can be produced commercially at lower costs than are presently available. In a preferred embodiment, the gain cell comprises an n channel metal oxide semiconductor field effect write transistor having its gate connected to a write word line WLw. Its drain is connected to a storage node Vs having a storage capacitance Cs associated therewith, and its source is connected to a write bit line BLw. An n channel metal oxide semiconductor field effect read transistor has its gate connected to the storage node Vs and its source connected to a read word line WLr. A PNP transistor has its base connected to the drain of the read transistor and its emitter connected to a read bit line BLr. A second embodiment is constructed with p channel FETs and an NPN transistor.

REFERENCES:
patent: 4090254 (1978-05-01), Ho et al.
patent: 4276616 (1981-06-01), Hennig
patent: 4677589 (1987-06-01), Haskell et al.
patent: 4933899 (1990-06-01), Gibbs
patent: 5027323 (1991-06-01), Miyamoto et al.
patent: 5038191 (1991-08-01), Hasegawa et al.
patent: 5060194 (1991-10-01), Sakui et al.
patent: 5757693 (1998-05-01), Houghton et al.
patent: 5761114 (1998-06-01), Bertin et al.

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