Threading-dislocation-free nanoheteroepitaxy of Ge on Si...

Details Threading-dislocation-free nanoheteroepitaxy of Ge on Si... Threading-dislocation-free nanoheteroepitaxy of Ge on Si...

2004-09-08

2009-08-25

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C117S088000

Reexamination Certificate

active

07579263

ABSTRACT:
A method of forming a virtually defect free lattice mismatched nanoheteroepitaxial layer is disclosed. The method includes forming an interface layer on a portion of a substrate. A plurality of seed pads are then formed by self-directed touchdown by exposing the interface layer to a material comprising a semiconductor material. The plurality of seed pads, having an average width of about 1 nm to 10 nm, are interspersed within the interface layer and contact the substrate. An epitaxial layer is then formed by lateral growth of the seed pads over the interface layer.

REFERENCES:
patent: 6576532 (2003-06-01), Jones et al.
patent: 7033936 (2006-04-01), Green
patent: 2001/0053618 (2001-12-01), Kozaki et al.
patent: 2002/0052061 (2002-05-01), Fitzgerald
patent: 2002/0098671 (2002-07-01), Cheong
patent: 2003/0092230 (2003-05-01), Koike et al.
patent: 2003/0102469 (2003-06-01), Jones et al.
patent: 2003/0168002 (2003-09-01), Zaidi
patent: 2004/0121507 (2004-06-01), Bude et al.
patent: 2004/0266145 (2004-12-01), Morse
patent: 2005/0136566 (2005-06-01), Morse
patent: 2005/0136626 (2005-06-01), Morse
patent: 2006/0073681 (2006-04-01), Han
patent: WO 0148799 (2001-07-01), None
patent: WO 02/090625 (2002-11-01), None
patent: WO 0290625 (2002-11-01), None
Alexander A. Ahklyaev and Masakazu Ichikawa. “Effect of Interfaces of Quantum Confinement in Ge Dots Grown On Si Surfaces With a SiO2 Coverage.” Surface Science 514 (2002) 19-26.
Serge Luryi and Ephram Suhir. “New Approach to the High Quality Epitaxial Growth of Lattice-Mismatched Materials.” Applied Physics Letters 49 (1986) 140-142.
Eun Soo Kim, Noritaka Usami and Yasuhiro Shiraki. “Selective Epitaxial Growth of Dot Structures On Patterned Si Substrates By Gas Source Molecular Beam Epitaxy.” Semiconductor Science Technology 14 (1999) 257-265.
Takeshi Kitajima, Bing Liu and Stephen R. Leone. “Two-Dimensional Periodic Alignment of Self-Assembled Ge Islands On Patterned Si(001) Surfaces.” Applied Physics Letters 80 (2002) 497-499.
T.A. Langdo, C.W. Leitz, M.T. Currie, E.A. Fitzgerald, A. Lochtefeld and D.A. Antoniades. “High Quality Ge On Si By Epitaxial Necking.” Applied Physics Letters 76 (2000) 3700-3702.
L. Vescan, C Dieker, A Hartmann and A van der Hart. “Si/Si1-xGex Dots Grown By Selective Epitaxy.” Semiconductor Science Technology 9 (1994) 387-391.
Qiming Li, Sang M. Han, Steven R.J. Brueck, Stephan Hersee, Ying-Bing Jiang and Huifang Xu. “Selective Growth of Ge On Si(100) Through Vias of SiO2 Nanotemplate Using Solid Source Molecular Beam Epitaxy.” Applied Physics Letters 83 (2003) 5032-5034.
Qiming Li, Ying-Bing Jiang, Huifang Xu, Stephan Hersee and Sang M. Han. “Heteroepitaxy of High-Quality Ge On Si By Nanoscale Ge Seeds Grown Through a Thin Layer of SiO2.” Applied Physics Letters 85 (2004) 1928-1930.
Alexander A. Shklyaev and Masakazu Ichikawa. “Effect of Interfaces of Quantum Confinement in Ge Dots Grown On Si Surfaces With a SiO2 Coverage.” Surface Science 514 (2002) 19-26.
Qiming Li, Ying-Bang Jiang, Huifang Xu, Stephen Hersee and Sang M. Han. “Heteroepitaxy of High-Quality Ge on Si by Nanoscale Ge Seeds Grown Through a Thin Layer of SiO2.” Applied Physics Letters 85 (2004) 1928-1930.
Alexander A. Shklyaev, Motoshi Shibata and Masakazu Ichikawa. “High-Density Ultrasmall Epitaxial Ge Islands on Si(111) Surfaces With a SiO2 Coverage.” Physical Review B 62 (2000) 1540-1543.
A. Barski, M. Derivaz, J. L. Rouviere and D Buttard. “Epitaxial Growth of Germanium Dots on Si(001) Surface Covered by a Very Thin Sllicon Oxide Layer.” Applied Physics Letters 77 (2000) 3541-3543.
Motoshi Shibata, Yoshiki Nitta, Ken Fujita and Masakazu Ichikawa. “Facets Formation of Pyramidal Si Nanocrystals Selectively Grown On Si(001) Windows In Ultrathin SiO2 Films.” Journal of Crystal Growth 220 (2000) 449-456.
Yakimov, A.I., et al. “Stark Effect In Type-II Ge/Si Quantum Dots.” Phys. Rev. B, vol. 67 (Mar. 31, 2003): Article 125318.
Tong, S., et al. “Normal-Incidence Ge Quantum-Dot Photodetectors at 1.5 μm Based On Si Substrate.” Appl. Phys. Lett., vol. 80 (Feb. 18, 2002): pp. 1189-1191.
Shklyaev, A.A. and Ichikawa, M. “Visible Photoluminescence of Ge Dots Embedded In Si/SiO2 Matrices.” Appl. Phys. Lett., vol. 80 (Feb. 25, 2002): pp. 1432-1434.
Derivaz, M. et al. “Growth of Highly Strained Germanium Dots On Si(001) Covered By A Silicon Nitride Layer.” Appl. Phys. Lett., vol. 81 (Nov. 11, 2002): pp. 3843-3845.
B.V. Kamenev, H. Grebel, L. Tsybeskov, T.I. Kamins, R. Stanley Williams, J.M. Baribeau, D.J. Lockwood, “Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures,” Applied Physics Letters, 83, No. 24, pp. 5035-5037 (Dec. 15, 2003).
R. People, J.C. Bean, “Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures,” Applied Physics Letters, 47, No. 3, pp. 322-324 (Aug. 1, 1985).
A.A. Shklyaev, M. Shibata, M. Ichikawa, “High-density ultrasmall epitaxial Ge islands on Si(111) surfaces with a SiO2coverage,” Physical Review B, 62, No. 3, pp. 1540-1543 (Jul. 15, 2001).
T. Stoica, L. Vescan, “Optoelectronic properties of thick SiGe layers grown as small mesas by low pressure chemical vapor deposition,” Journal of Applied Physics 93, No. 8, pp. 4461-4467 (Apr. 15, 2003).
G. Abstreiter, P. Schittenhelm, C. Engel, E. Silveira, A. Zrenner, D. Meertens, W. Jager, “Growth and characterization of self-assembled Ge-rich islands of Si,” Semicond. Sci. Technol., 11 pp. 1521-1528 (1996).
A.O. Orlov, I. Amlani, G. H. Bernstein, C.S. Lent, G.L. Snider, “Realization of a Functional Cell for Quantum-Dot Cellular Automata,” Science, vol. 277, pp. 928-930 (Aug. 15, 1997).
F.M. Ross, J. Tersoff, R.M. Tromp, “Coarsening of Self-Assembled Ge Quantum Dots on Si(100),” Physical Review Letters, 80, No. 5, pp. 984-987 (Feb. 2, 1998).
M. Stoffel, U. Denker, O.G. Schmidt, “Electroluminescence of self-assembled Ge hut clusters,” Applied Physics Letters, 82, No. 19, pp. 3236-3238 (May 12, 2003).
L. Vescan, T. Stoica, O. Chretien, M. Goryll, E. Mateeva, A. Muck, “Size distribution and electroluminescence of self-assembled Ge dots,” Journal of Applied Physics, 87, No. 10, pp. 7275-7282 (May 15, 2000).

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