Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-08-31
2009-12-01
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S140000, C257SE29259, C257SE29261
Reexamination Certificate
active
07625787
ABSTRACT:
A silicon (Si)-on-insulator (SOI) high voltage transistor with a body ground is provided with an associated fabrication process. The method provides a SOI substrate with a buried oxide (BOX) layer and a Si top layer having a first thickness and a second thickness, greater than the first thickness. A body ground is formed in the second thickness of Si top layer overlying the BOX layer. A control channel is formed in the first thickness of the Si top layer. A control gate is formed overlying the control channel. An auxiliary channel is formed in the second thickness of Si top layer partially overlying the body ground and extending into the first thickness of the Si top layer. An auxiliary gate is formed overlying the auxiliary channel. A pn junction is formed in the second thickness of Si top layer between the auxiliary channel and the body ground.
REFERENCES:
patent: 6706569 (2004-03-01), Kim et al.
patent: 2002/0020877 (2002-02-01), Mandelman et al.
patent: 2002/0109187 (2002-08-01), Matsumoto et al.
patent: 2002/0145174 (2002-10-01), Aipperspach et al.
patent: 2008/0182394 (2008-07-01), Yang et al.
N. Nenadovic, et al, “RF Power Silicon-On-Glass VDMOSFETs” IEEE EDL25, #6 p424, 2004.
M. Wasekura et al, “An SOI-BiCDMOS Chipset for Automotive Electronically Controlled Brake System” 2006 IEEE SOI International OSI conference Proceeding, Paper 7.1.
Hsu Sheng Teng
Lee Jong-Jan
Chin Ker-Ming
Law Office of Gerald Maliszewski
Le Thao X
Maliszewski Gerald
Sharp Laboratories of America Inc.
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