Thin resist with nitride hard mask for via etch application

Details Thin resist with nitride hard mask for via etch application Thin resist with nitride hard mask for via etch application

1998-12-01

2000-10-03

Powell, William

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

438723, 438724, 438725, 438692, 438694, 438700, 438736, H01L 21302

Patent

active

061270709

ABSTRACT:
A method of forming a via structure is provided. In the method, a dielectric layer is formed on an anti-reflective coating (ARC) layer covering a first metal layer; and a nitride layer is formed on the dielectric layer. An ultra-thin photoresist layer is formed on the nitride layer, and the ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern for a via. The patterned ultra-thin photoresist layer is used as a mask during a first etch step to transfer the via pattern to the nitride layer. The first etch step includes an etch chemistry that is selective to the nitride layer over the ultra-thin photoresist layer and the dielectric layer. The nitride layer is employed as a hard mask during a second etch step to form a contact hole corresponding to the via pattern by etching portions of the dielectric layer.

REFERENCES:
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patent: 4484979 (1984-11-01), Stocker
patent: 5040020 (1991-08-01), Rauschenbach et al.
patent: 5534312 (1996-07-01), Hill et al.
patent: 5611888 (1997-03-01), Bosch et al.
patent: 5757077 (1998-05-01), Chung et al.
patent: 5786262 (1998-07-01), Jang et al.
patent: 5817567 (1998-10-01), Jang et al.
"Reactive-Ion Etch of Silicon Nitride Spacer with High Selectivity to Oxide"; Regis et al.; abstract only; 1997. IEEE/SEMI Adv. Semicond. Manuf. Conf. Workshop, 8.sup.th.

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