Thin resist process by sub-threshold exposure

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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G21K 500

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active

061276863

ABSTRACT:
The present invention utilizes a sub-threshold exposure step on an optically sensitive resist that is applied to a semiconductor wafer to thin the resist below the thickness which can be achieved by normal spinning and/or thinning techniques. Furthermore, the thinned resist can be re-expose to UV energies so as to develop patterns on the surface of the semiconductor wafer. An apparatus for vibrating and rotating the resist during the sub-threshold step is also disclosed herein.

REFERENCES:
patent: 3950170 (1976-04-01), Grosholz
patent: 4440493 (1984-04-01), Hiraga
patent: 4598039 (1986-07-01), Fischer et al.
patent: 4931380 (1990-06-01), Owens et al.
patent: 5097137 (1992-03-01), Ogoh
patent: 5468595 (1995-11-01), Livesay
patent: 5905019 (1999-05-01), Obszarny

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