Thin polysilicon resistors

Details Thin polysilicon resistors Thin polysilicon resistors

1990-11-14

1992-08-25

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 437186, 437233, 437247, 437918, H01L 2100

Patent

active

051415976

ABSTRACT:
Polycrystalline silicon resistors are formed by reducing the initial thickness of a poly layer to a magnitude such that the etch end point of the lightly doped resistors is equal to the etch end point of the heavily doped interconnection.

REFERENCES:
patent: 3902926 (1975-09-01), Perloff et al.
patent: 3947866 (1976-03-01), Stellrecht
patent: 4560419 (1985-12-01), Bourassa et al.
patent: 4653176 (1987-03-01), Van Ommen
patent: 4692998 (1987-09-01), Armstrong et al.
patent: 4701241 (1987-10-01), Schlesier

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