Thin oxide sidewall insulators for silicon-over-insulator transi

Details Thin oxide sidewall insulators for silicon-over-insulator transi Thin oxide sidewall insulators for silicon-over-insulator transi

1988-11-10

1990-09-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 62, 437938, 357 237, 357 52, H01L 21265

Patent

active

049563076

ABSTRACT:
A silicon-over-insulator transistor is provided having a semiconductor mesa (40) overlying a buried oxide (42). Insulating regions (50) are formed at the sides of the semiconductor mesa (40). An oxidizable layer (56) is formed over the mesa's insulating region (46). This oxidizable layer (56) is then anisotropically etched, resulting in oxidizable sidewalls (60). An optional foot (70) may be formed at the bottom edge of the oxidizable sidewalls (76). These oxidizable sidewalls (76) are then oxidized, resulting in a pure oxide sidewall (64). The gate (66) is then formed over the pure oxide sidewalls (64) and a gate oxide (62).

REFERENCES:
patent: 4703554 (1987-11-01), Havemann
patent: 4714685 (1987-12-01), Schubert
Wolf, S. et al., Silicon Processing for the VLSI Era, Lattice Press, Sunset Beach, Calif., 1986, pp. 179-82.

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