Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-11-07
2006-11-07
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S785000, C438S798000
Reexamination Certificate
active
07132373
ABSTRACT:
The present invention provides a method for producing a crystalline metal oxide thin film by first depositing a substantially amorphous metal oxide film, and thereafter, as a post treatment, exposing the film to low temperature plasma in a high frequency electric field at 180° C. or less, and the crystalline metal oxide thin film produced by this method. Because the producing method according to the present invention allows a dense and homogenous crystalline metal oxide thin film to be formed onto a substrate at a low temperature without requiring active heat treatment, a metal oxide thin film having desirable characteristics can be formed without damaging the characteristics of a substrate even if the substrate has comparatively low heat resistance.
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Fukuhisa Koji
Nakajima Akira
Ohsaki Hisashi
Serikawa Tadashi
Shinohara Kenji
Birch & Stewart Kolasch & Birch, LLP
The University of Tokyo
Thomas Toniae M.
Toto Ltd.
Wilczewski Mary
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