Thin magnetron structures for plasma generation in ion...

Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C315S224000, C118S728000, C438S706000, C356S369000

Reexamination Certificate

active

06879109

ABSTRACT:
A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.

REFERENCES:
patent: 5343047 (1994-08-01), Ono et al.
patent: 5429855 (1995-07-01), Kotani et al.
patent: 5780863 (1998-07-01), Benveniste et al.
patent: 5783492 (1998-07-01), Higuchi et al.
patent: 5969366 (1999-10-01), England et al.
patent: 6056848 (2000-05-01), Daviet
patent: 6143129 (2000-11-01), Savas et al.
patent: 6160262 (2000-12-01), Aoki et al.
patent: 6312555 (2001-11-01), Daviet
patent: 6326631 (2001-12-01), Politiek et al.
patent: 6441382 (2002-08-01), Huang
patent: 6489622 (2002-12-01), Chen et al.
patent: 6521895 (2003-02-01), Walther et al.
patent: 6559942 (2003-05-01), Sui et al.
patent: 6652709 (2003-11-01), Suzuki et al.
patent: 6755150 (2004-06-01), Lai et al.
patent: 20020179854 (2002-12-01), Tsukihara et al.
patent: 20030066976 (2003-04-01), Chen et al.
“Charged Particle Beams”, Acceleration and Transport of Neutralized Ion Beams, Stanley Humphries, Jr., 1990, pp. 528-534.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thin magnetron structures for plasma generation in ion... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin magnetron structures for plasma generation in ion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin magnetron structures for plasma generation in ion... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3389446

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.