Thin layer semi-conductor structure comprising a heat...

Details Thin layer semi-conductor structure comprising a heat... Thin layer semi-conductor structure comprising a heat...

2007-11-27

2007-11-27

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S455000, C438S458000, C438S459000, C438S464000

Reexamination Certificate

active

10928057

ABSTRACT:
The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from the support substrate. The intermediate zone has a considered sufficiently good electrical quality of interface with the semi-conductor surface layer and includes at least one first layer, of satisfactory thermal conductivity to provide a considered as correct operation of the electronic device or devices which are to be elaborated from the semi-conductor surface layer (2), the intermediate zone including additionally a second insulating layer of low dielectric constant, located between the first layer and the support substrate.

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