Thin layer element and associated fabrication process

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S217000, C438S514000

Reexamination Certificate

active

07579226

ABSTRACT:
A method is provided for fabricating a thin layer element, in which a layer of a first material supports a pattern of a second material having a thickness of less than 15 nm, including a step of doping by implanting a chemical species over at least a portion of the layer-pattern assembly to stabilize the pattern on the layer.

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