Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-08-19
2009-08-25
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S217000, C438S514000
Reexamination Certificate
active
07579226
ABSTRACT:
A method is provided for fabricating a thin layer element, in which a layer of a first material supports a pattern of a second material having a thickness of less than 15 nm, including a step of doping by implanting a chemical species over at least a portion of the layer-pattern assembly to stabilize the pattern on the layer.
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Wong et al., “Periodic Mass Shedding of a Retracting Solid Film Step,” Acta Metallurgica Inc., “Acta mater,” 48 (2000), pp. 1719-1728.
Barbe Jean-Charles
Faynot Olivier
Vinet Maud
Brinks Hofer Gilson & Lione
Commissariat a l''Energie Atomique
Menz Laura M
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