Thin films of ABO.sub.3 with excess B-site modifiers and method

Details Thin films of ABO.sub.3 with excess B-site modifiers and method Thin films of ABO.sub.3 with excess B-site modifiers and method

1997-01-27

1997-11-25

Brunsman, David

Compositions: coating or plastic

Coating or plastic compositions

Heavy metal compound containing

10628719, 501134, 501138, C04B 3546, C07F 300, C07F 728

Patent

active

056907273

ABSTRACT:
A method for fabricating an integrated circuit capacitor having a dielectric layer comprising BST with excess B-site material, such as titanium, added. A polyoxyalkylated metal liquid precursor solution is prepared comprising a stock solution of BST of greater then 99.999% purity blended with excess B-site material such as titanium such that the titanium is in the range of 0-100 mol %. A xylene exchange is then performed to adjust the viscosity of the solution for spin-on application to a substrate. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 650.degree. C. to 800.degree. C. for about an hour to form a layer of BST with excess titanium. A second electrode is deposited, patterned, and annealed at between 650.degree. C. to 800.degree. C. for about 30 minutes. The resultant capacitor exhibits an enlarged dielectric constant with only a small increase in leakage current.

REFERENCES:
patent: 4963390 (1990-10-01), Lipeles et al.
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5166759 (1992-11-01), Ueno et al.
patent: 5198269 (1993-03-01), Swartz et al.
patent: 5514822 (1996-05-01), Scott et al.
E. Fujii, et al; ULSI DRAM Technology with Ba.sub.0.7 Sr.sub.0.3 TiO.sub.3 Film of 1.3nm Equivalent SiO.sub.2 Thickness and 10.sup.-9 A/cm.sup.2 Leakage Current; IEDM Technical Digest, (1992), no month avail. pp. 10.3.1-10.3.4.
Kuniaki Koyama, et al.; A Stacked Capacitor with (Ba.sub.x Sr.sub.1-x)TiO.sub.3 For 256 DRAM; IEDM, (Dec. 1991); pp. 32.1.1-32.1.4.
W.D. Kingery, et al.; Introduction to Ceramics, Second Edition; pp. 969-971 no date avail.
G.M. Vest, et al.; Synthesis of Metallo-Organic Compounds For MOD Powders and Films; Materials Research Society Symp. Proc. vol. 60, (1986); no month avail. pp. 35-42.
Robert W. Vest, et al.; PbTiO.sub.3 Films From Metalloorganic Precursors; IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 35, No. 6, (Nov. 1988); pp. 711-717.
M. Azuma, et al.; Electrical Characteristics of High Dielectric Constant Materials for Integrated Ferroelectrics; ISIF (1992); no month avail. pp. 109-117.
J.V. Mantese, et al.; Metalorganic Deposition (MOD): A Nonvacuum, Spin-on, Liquid-Based, Thin Film Method; MRS Bulletin, (Oct. 1989); pp. 48-53.
B.M. Melnick, et al.; Process Optimization and Characterization of Device Worthy Sol-Gel Based PZT for Ferroelectric Memories; Ferroelectrics, 1990 vol. 109, (1990); no month avail. pp. 1-23.

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