Thin films of ABO.sub.3 with excess A-site and B-site modifiers

Details Thin films of ABO.sub.3 with excess A-site and B-site modifiers Thin films of ABO.sub.3 with excess A-site and B-site modifiers

1997-12-02

2000-02-15

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

295310, H01L 2976

Patent

active

060256192

ABSTRACT:
A method for fabricating an integrated circuit capacitor having a dielectric layer comprising BST with excess A-site and B-site materials such as barium and titanium added. An organometallic or metallic soap precursor solution is prepared comprising a stock solution of BST of greater than 99.999% purity blended with excess A-site and B-site materials such as barium and titanium such that the barium is in the range of 0.01-100 mol %, and such that the titanium is in the range of 0.01-100 mol %. A xylene exchange is then performed to adjust the viscosity of the solution for spin-on application to a substrate. The precursor solution is spun on a first electrode, dried at 400.degree. C. for 2 to 10 minutes, then annealed at 650.degree. C. to 800.degree. C. for about an hour to form a layer of BST with excess titanium. A second electrode is deposited, patterned, and annealed at between 650.degree. C. to 800.degree. C. for about 30 minutes. The resultant capacitor exhibits an enlarged dielectric constant with little change in leakage current.

REFERENCES:
patent: 5423285 (1995-06-01), Paz De Araujo et al.
patent: 5456945 (1995-10-01), McMillan et al.
patent: 5514822 (1996-05-01), Scott et al.
patent: 5624707 (1997-04-01), Azuma et al.
patent: 5690727 (1997-11-01), Azuma et al.
patent: 5723361 (1998-03-01), Azuma et al.
E. Fujii, et al,; ULSI DRAM Technology with Ba.sub.0.7 Sr.sub.0.3 TiO.sub.3 Film of 1.3nm Equivalent SiO.sub.2 Thickness and 10.sup.-9 A/cm.sup.2 Leakage Current; IEDM Technical Digest, 1992; pp. 10.3.1-10.3.4.
Kuniaki Koyama, et al,; A Stacked Capacitor with (Ba.sub.x Sr.sub.1-x)TiO.sub.3 For 256 DRAM; IEDM, Dec. 1991; pp. 32.1.1-32.1.4.
W.D. Kingery, et al,; Introduction to Ceramics, Second Edition; pp. 969-971.
G.M.Vest, et al,; Synthesis of Metallo-Organic Compounds For MOD Powders and Films; Materials Research Society Symp. Proc. vol. 60, 1986; pp. 35-42.
Robert W. Vest, et al.; PbTiO.sub.3 Films From Metalloorganic Precursors; IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 35, No. 6, No. 1988; pp. 711-717.
M. Azuma, et al.; Electrical Characteristics of High Dielectric Constant Materials For Integrated Ferroelectrics; ISIF, 1992; pp. 109-117.
J.V. Mantese, et al.; Metalorganic Deposition (MOD): A Nonvacuum, Spin-on, Liquid-Based, Thin Film Method: MRS Bulletin, Oct. 1989; pp. 48-53.
B.M. Melnick, et al,; Process Optimization and Characterization of Device Worthy Sol-Gel Based PZT For Ferroelectric Memories; Ferroelectrics, 1990, vol. 109, 1990; pp. 1-23.

Affiliated with

Also associated with

Rating

Thin films of ABO.sub.3 with excess A-site and B-site modifiers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin films of ABO.sub.3 with excess A-site and B-site modifiers , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin films of ABO.sub.3 with excess A-site and B-site modifiers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1907844