Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-05
2011-04-05
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE51007, C257SE29273
Reexamination Certificate
active
07919825
ABSTRACT:
The use of a poly(arylene ether) polymer as a passivation or gate dielectric layer in thin film transistors. This poly(arylene ether) polymer includes polymer repeat units of the following structure:in-line-formulae description="In-line Formulae" end="lead"?—(O—Ar1—O—Ar2—O—)m—(—O—Ar3—O—Ar4—O)n—in-line-formulae description="In-line Formulae" end="tail"?where Ar1, Ar2, Ar3, and Ar4are identical or different aryl radicals, m is 0 to 1, n is 1−m, and at least one of the aryl radicals is grafted to the backbone of the polymer.
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Burgoyne, Jr. William Franklin
Kretz Christine Peck
Markley Thomas John
Air Products and Chemicals Inc.
Boyer Michael K.
Dang Trung
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