Thin film transistors including silicide layer and multilayer co

Details Thin film transistors including silicide layer and multilayer co Thin film transistors including silicide layer and multilayer co

1996-11-21

1999-08-24

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 57, 257 72, 257382, 257383, 257384, 257757, 257758, H01L 21441

Patent

active

059427671

ABSTRACT:
Thin film transistors include a silicide layer between a doped amorphous silicon layer and source/drain electrodes. The source/drain electrodes include a first non-silicidable layer and a second non-oxidizing layer. In order to form the silicide layer, a silicidable metal layer is deposited on the doped amorphous silicon layer, reacted to form a silicide, and the unsilicided portion of the metal layer is removed. High performance thin film transistors are thereby provided.

REFERENCES:
patent: 4835593 (1989-05-01), Arnold et al.
patent: 5177577 (1993-01-01), Taniguchi et al.
patent: 5300813 (1994-04-01), Joshi et al.
patent: 5334860 (1994-08-01), Naito
patent: 5384485 (1995-01-01), Nishida et al.

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