Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Patent
1996-11-12
1997-12-09
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
257 65, 257 66, 257 72, 257 75, 257350, 257627, H01L 2904, H01L 31036, H01L 2912
Patent
active
056963882
ABSTRACT:
In an active matrix type liquid-crystal display device, in a peripheral circuit portion, there is arranged a TFT having a high mobility and capable of allowing a large amount of on-state current to flow. In a pixel portion, there is arranged a TFT having a small off-state current. These TFTs having different characteristics are constituted by using crystalline silicon film whose crystal has grown in a direction parallel with a substrate. That is, an angle formed between a crystal growing direction and a carrier moving direction are made different from each other, thereby to control a resistance imposed on the carriers when moving to determine the characteristics of the TFT. For example, when the crystal growing direction coincides with the carrier moving direction, high mobility can be given to the carriers. Further, when the crystal growing direction is arranged perpendicular to the carrier moving direction, the off-state current can be lowered.
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Funada Fumiaki
Morita Tatsuo
Takayama Toru
Tanaka Hirohisa
Zhang Hongyong
Ferguson Jr. Gerald J.
Ngo Ngan V.
Semiconductor Energy Laboratory Co,. Ltd.
Sharp Corporation
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