Thin film transistors and methods of manufacturing the same

Details Thin film transistors and methods of manufacturing the same Thin film transistors and methods of manufacturing the same

2011-04-12

2011-04-12

Nguyen, Thinh T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S059000, C257SE21460, C438S104000

Reexamination Certificate

active

07923722

ABSTRACT:
A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.

REFERENCES:
patent: 6563174 (2003-05-01), Kawasaki et al.
patent: 7049190 (2006-05-01), Takeda et al.
patent: 2004/0023432 (2004-02-01), Haga
patent: 2004/0038446 (2004-02-01), Takeda et al.

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