Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-11-29
2000-10-24
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438608, 438625, 438650, 438678, 438687, H01L 2144
Patent
active
061367028
ABSTRACT:
The specification describes source/drain contact material that is compatible with organic semiconductors in thin film transistor integrated circuits. The contact material is nickel/gold wherein the nickel is plated as Ni--P on a base conductor, preferably TiN.sub.x, by electroless plating, and the gold overlay is deposited by displacement plating. It was found, unexpectedly, that forming Ni/Au contacts in this way extends the lifetime of TFT devices substantially.
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Chandross Edwin Arthur
Crone Brian Keith
Dodabalapur Ananth
Filas Robert William
Bowers Charles
Lucent Technologies - Inc.
Schillinger Laura
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