Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-02-13
2007-02-13
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S072000, C257SE29117, C257SE29151, C257SE29273
Reexamination Certificate
active
10748271
ABSTRACT:
In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.
REFERENCES:
patent: 6329226 (2001-12-01), Jones et al.
patent: 6916681 (2005-07-01), Asano et al.
patent: 2001/0017372 (2001-08-01), Koyama
patent: 2001/0050532 (2001-12-01), Eida et al.
patent: 2002/0036267 (2002-03-01), Ikeda et al.
patent: 2002/0057055 (2002-05-01), Yamazaki et al.
patent: 2002/0097362 (2002-07-01), Yamada et al.
patent: 2002/0155729 (2002-10-01), Baldwin et al.
patent: 2003/0107688 (2003-06-01), Yamagishi
patent: 2005/0205868 (2005-09-01), Yamazaki et al.
patent: 2000-101091 (2000-04-01), None
patent: 2001-0084247 (2001-09-01), None
patent: 0390457 (2003-07-01), None
Patent Abstracts of Japan, vol. 2003, No. 12, (Dec. 5, 2003) & JP 2003 255857 Nippon Hoso Kyokai <NHK>.
Hur, Ji Ho, et al., “Late-News Paper: A 2 inch A-Si:H TFT-LCD on Plastic”, 2002, SID International Symposium Digest of Technical Papers, Boston, MA (US), May 21-23, 2002 [SID 02 DIGEST] vol. 33, No. 2, pp. 802-805 (May 2002).
Suo, Z., et al., “Mechanics of rollable and foldable fillm-on-foil electronics” Applied Physics Letters, vol. 74, No. 8, pp. 1177-1179, (Feb. 22, 1999).
Chae Soo-doo
Choi Young-min
Kim Do-young
Kwon Jang-yeon
Lee June-key
Lee & Morse P.C.
Nguyen Joseph
Parker Kenneth
Samsung Electronics Co,. Ltd.
LandOfFree
Thin film transistor with protective cap over flexible... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor with protective cap over flexible..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor with protective cap over flexible... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3876991