Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-02-21
2006-02-21
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S150000
Reexamination Certificate
active
07001802
ABSTRACT:
A thin film transistor with multiple gates using an MILC process which is capable of materializing multiple gates without increasing dimensions and a method thereof. The thin film transistor has a semiconductor layer which is formed on a insulating substrate in a zigzag shape; and a gate electrode which is equipped with one or more slots intersecting with the semiconductor layer, the semiconductor layer includes two or more body parts intersecting with the gate electrode; and one or more connection parts connecting each neighboring body part, wherein a part overlapping the semiconductor layer in the gate electrode acts as a multiple gate, and MILC surfaces are formed at a part which does not intersect with the gate electrode in the semiconductor layer.
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U.S. Appl. No. 10/978,376, filed Nov. 2, 2004, So, Samsung SDI Co., Ltd.
U.S. Appl. No. 10/237,875, filed Sep. 10, 2002 So, Samsung SDI Co., Ltd.
Le Thao P.
Samsung SDI & Co., Ltd.
Stein, McEwen & Bui LLP
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