Thin-film transistor with fully gated channel region

Details Thin-film transistor with fully gated channel region Thin-film transistor with fully gated channel region

1993-11-29

1995-05-23

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 57, 257 66, 257350, 257903, H01L 2701, H01L 2904, H01L 2711

Patent

active

054183936

ABSTRACT:
A semiconductor device (10) has a thin-film transistor (TFT) formed in and around an opening (24) in a dielectric layer (22). A conductive layer (26) lines the opening sidewalls and serves as a gate electrode of the transistor. A conductive layer (30) is deposited over the gate electrode to form a source region (32), a channel region (36), and a drain region (34). The two conductive layers are separated by a gate dielectric (28). Because both the gate electrode and the channel region conform to the opening sidewalls and bottom, the entire channel region is under direct gate control. Device (10) may also include a conductive region, such as a gate electrode (15) of a bulk transistor, at the bottom of opening (24) and in electrical contact with the TFT gate electrode.

REFERENCES:
patent: 4980732 (1990-12-01), Okazawa
patent: 5158898 (1992-10-01), Hayden et al.
patent: 5235189 (1993-08-01), Hayden et al.
patent: 5270968 (1993-12-01), Kim et al.
patent: 5285093 (1994-02-01), Lage et al.
Kazuo Itabashi et al., "A Split Wordline Cell for 16Mb SRAM Using Polysilicon Sidewall Contacts", Dec. 8-11, 1991 IEDM, pp. 477-479.

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