Thin film transistor with an increased switching rate

Details Thin film transistor with an increased switching rate Thin film transistor with an increased switching rate

1992-01-24

1993-09-21

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, 359 59, H01L 2904, H01L 29036

Patent

active

052471942

ABSTRACT:
A thin film transistor arranged in a matrix array with a strip type gate address line and a source signal line, comprising: an insulating layer formed on the gate address line; a semiconductor layer formed on the insulating layer, which serves as a channel conductive layer; the source signal line formed passing by one side of the channel layer; a first drain electrode arranged in parallel with, and spaced from, said source signal line; and at least one pixel electrode connected to any one side of the drain electrode.

REFERENCES:
patent: 4738749 (1988-04-01), Maurice et al.
patent: 4775861 (1988-10-01), Saito
patent: 4918494 (1990-04-01), Koden et al.
patent: 5015597 (1991-05-01), Vinouze et al.
patent: 5049952 (1991-09-01), Choi
patent: 5055899 (1991-10-01), Wakai et al.
patent: 5070379 (1991-12-01), Nomoto et al.

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