Thin film transistor which prevents generation of hot carriers

Details Thin film transistor which prevents generation of hot carriers Thin film transistor which prevents generation of hot carriers

1994-05-02

1995-05-09

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257204, 257365, 257366, 257368, 257315, 257903, H01L 2904, H01L 2978, H01L 2702, H01L 4900

Patent

active

054142776

ABSTRACT:
A semiconductor transistor device comprises a gate electrode disposed over an insulating surface, a spacer element located at the end of the gate electrode, a gate insulating film covering the gate electrode, a first diffusion region spaced apart from one end of the gate electrode, separated therefrom by the gate insulating film and by the spacer element which reduces the electric field between the gate and first diffusion region, the first diffusion region extending vertically above the gate insulating film, and a second diffusion region disposed above the gate insulating film having one end spaced from the first diffusion vertically extending region.

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patent: 4980732 (1990-12-01), Okazawa
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patent: 5220182 (1993-06-01), Matsuoka et al.
A 5.9 .mu.m.sup.2 Super Low Power SRAM Cell Using a New Phase-Shift Lithography, Yamanaka et al. IEEE IEDM.
A Polysilicon Transistor Technology for Large Capacity SRAMs (Invited paper) S. Ikeda, S. Hashiba, I. Kuramoto, H. Katoh, T. Yamanaka, T. Hashimoto, N. Hashimoto and S. Meguro, Hitachi, Ltd. Tokyo, Japan 1990 IEEE IEDM 90-469-472.

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