Thin-film transistor type photosensor

Details Thin-film transistor type photosensor Thin-film transistor type photosensor

2007-12-20

2010-12-14

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257S072000, C257S291000, C257S436000, C257S448000, C257S459000, C257SE31085, C257SE31124, C257SE29117, C257SE29120, C257SE31125

Reexamination Certificate

active

07851836

ABSTRACT:
A photosensor includes a semiconductor thin film for photoelectric conversion having a first side portion and a second side portion. A source electrode extends in the longitudinal direction of the semiconductor thin film and has a side edge portion that overlaps the first side portion of the semiconductor thin film, and a drain electrode extends in the longitudinal direction and has a side edge portion that overlaps the second side portion of the semiconductor thin film. At least one of the side edge portions of the source and drain electrodes has protruding portions which are arranged along the longitudinal direction and which overlap the semiconductor thin film, and notched portions formed between the protruding portions. An ohmic contact layer is formed between the semiconductor thin film and the protruding portions of the at least one of the side edge portions of the source and drain electrodes.

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Gadelrab. S. M. et al “Performance of Photo-Transistors With Thin (50 NM) a-Si:H Layers” Amorphous Silicon Technology 1995. San Francisco, Apr. 18-21, 1995; (MRS Symposium Proceedings), Pittsburgh, MRS, US, vol. 377, Apr. 18, 1995, pp. 713-718, XP000656369, ISBN: 978-1-55899-280-1.
English Language International Search Report and Written Opinion dated Jul. 18, 2008 issued in counterpart Appln. No. PCT/JP2007/074587.

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