Thin film transistor substrate with low reflectance upper...

Details Thin film transistor substrate with low reflectance upper... Thin film transistor substrate with low reflectance upper...

2004-06-23

2009-06-30

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S088000, C257SE23163, C257SE31126, C257SE33064, C438S155000

Reexamination Certificate

active

07554162

ABSTRACT:
A thin film transistor substrate includes an upper electrode for electrically connecting a transparent picture element electrode to the thin film transistor. The upper electrode includes at least a first metal layer and a second metal layer formed on the first metal layer. The second metal layer has a lower reflectance than the first metal layer and the first metal layer has a region not overlapped by the second metal layer.

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patent: 9-307113 (1997-11-01), None
patent: 10-65174 (1998-03-01), None
patent: 2000-131716 (2000-05-01), None

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