Thin film transistor substrate of horizontal electric field...

Liquid crystal cells – elements and systems – Particular structure – Having significant detail of cell structure only

Reexamination Certificate

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Details

C349S144000, C257S059000, C257S072000

Reexamination Certificate

active

08077280

ABSTRACT:
A thin film transistor substrate of horizontal electric field type liquid crystal display device includes: a gate line and a common line arranged in parallel on a substrate and formed from a first conductive layer; a data line formed from a second conductive layer, the data line crossing the gate line and the common line having a gate insulating film therebetween such that the data line, the gate line and the common line define a pixel area; a thin film transistor having a gate connected to the gate line and a source electrode connected to the data line; a common electrode extending from the common line into the pixel area and formed from the first conductive layer; a protective film for covering a plurality of signal lines and electrodes and the thin film transistor; a pixel hole in the protective film having an elongated shape that parallels the common electrode; and a pixel electrode connected to a side surface of a drain electrode of the thin film transistor and formed from a third conductive layer within the pixel hole.

REFERENCES:
patent: 6208399 (2001-03-01), Ohta et al.
patent: 6894753 (2005-05-01), Song et al.
patent: 2001/0022633 (2001-09-01), Kwak et al.
patent: 2002/0093614 (2002-07-01), Moon et al.
patent: 2003/0197182 (2003-10-01), Kim et al.
patent: 2006/0186411 (2006-08-01), Kim et al.
patent: 2000-0033515 (2000-06-01), None
patent: 2003-0082647 (2003-10-01), None

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