Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-10
2006-10-10
Owens, Douglas W. (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S157000
Reexamination Certificate
active
07118947
ABSTRACT:
A thin film transistor substrate structure of a horizontal electric field type LCD comprises a plurality of signal lines including a gate, a data, and a common lines disposed on a substrate; the data line intersecting with the gate and common lines, a gate insulating film disposed between the data line and the gate and common lines, a pixel area being defined by the intersection of the data and gate lines; a thin film transistor disposed at the intersection of the data line and gate line; a common and a pixel electrodes both having a portion extended into the pixel area; a protective film disposed over the substrate and the thin film transistor; and at least one pad structure including an upper pad electrode contacting a lower pad electrode within a first contact hole wherein the upper pad electrode is absent from the upper surface of the protective film.
REFERENCES:
patent: 2003-79539 (2003-10-01), None
patent: 2003-82648 (2003-10-01), None
Chang Youn-Gyoung
Cho Heung-Lyul
Yoo Soon-Sung
LG.Philips LCD Co. , Ltd.
Morgan & Lewis & Bockius, LLP
Owens Douglas W.
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