Thin film transistor substrate, method of manufacturing the...

Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal

Reexamination Certificate

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Details

C349S141000, C349S038000, C349S043000

Reexamination Certificate

active

08031285

ABSTRACT:
This invention relates to a thin film transistor substrate, a method of manufacturing the same, and a liquid crystal display panel including the same. The thin film transistor substrate includes a substrate, gate lines disposed on the substrate and extending in one direction, common voltage lines disposed on the substrate and spaced apart from the gate lines, and a gate insulating film disposed on the gate lines and the common voltage lines, the gate insulating film having first contact holes exposing a part of each common voltage line. Common electrodes are disposed on the gate insulating film and are connected to the common voltage lines through the first contact holes. Data lines are disposed on the gate insulating film and extend in a direction crossing the gate lines and thin film transistors are disposed at crossings of the gate lines and the data lines. The thin film transistors are connected to the gate lines and the data lines and include source electrodes and drain electrodes. Pixel electrodes are connected to the thin film transistors.

REFERENCES:
patent: 6233034 (2001-05-01), Lee et al.
patent: 6462800 (2002-10-01), Kim et al.
patent: 6562645 (2003-05-01), Sung et al.
patent: 7659959 (2010-02-01), Kim et al.
patent: 2002/0089631 (2002-07-01), Lee et al.
patent: 2004/0169808 (2004-09-01), Shih et al.

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