Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-08-02
2011-08-02
Cao, Phat X (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000
Reexamination Certificate
active
07989807
ABSTRACT:
Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.
REFERENCES:
patent: 2008/0042135 (2008-02-01), Ryu et al.
patent: 2008/0169473 (2008-07-01), Cho
patent: 2005-0038116 (2005-04-01), None
patent: 2005-0066640 (2005-06-01), None
patent: 2006-0112042 (2006-10-01), None
Jeon Kyung-Sook
Kong Hyang-Shik
Ryu Hye-Young
Yang Byung-Duk
Cao Phat X
Doan Nga
Innovation Counsel LLP
Samsung Electronics Co,. Ltd.
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