Thin film transistor substrate having transparent conductive...

Details Thin film transistor substrate having transparent conductive... Thin film transistor substrate having transparent conductive...

2011-04-12

2011-04-12

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C257S072000, C257S043000, C257SE27116

Reexamination Certificate

active

07923287

ABSTRACT:
A thin film transistor substrate and a method of manufacturing the same are disclosed. The method of manufacturing a thin film transistor substrate includes forming a first conductive pattern group including a gate line, a gate electrode, and a lower gate pad electrode on a substrate, forming a gate insulating layer on the substrate on which the first conductive pattern group is formed, forming an oxide semiconductor pattern overlapping the gate electrode on the gate insulating layer, and forming first and second conductive layers on the substrate on which the oxide semiconductor pattern is formed and patterning the first and second conductive layers to form a second conductive pattern group including a data line, a source electrode, a drain electrode, and a data pad.

REFERENCES:
patent: 6727522 (2004-04-01), Kawasaki et al.
patent: 6933568 (2005-08-01), Yang et al.
patent: 2005/0199960 (2005-09-01), Hoffman et al.
patent: 101335274 (2008-12-01), None
patent: 2002-76356 (2002-03-01), None
patent: 2004-273614 (2004-09-01), None
patent: 2006-173580 (2006-06-01), None
Patent Abstracts of Japan, Publication No. 2002-076356, Mar. 15, 2002, 2 pp.
Patent Abstracts of Japan, Publication No. 2004-273614, Sep. 30, 2004, 2 pp.
Patent Abstracts of Japan, Publication No. 2006-173580, Jun. 29, 2006, 1 p.

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