Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-09-21
2010-02-02
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE27131, C257SE29117, C349S043000, C349S046000
Reexamination Certificate
active
07655949
ABSTRACT:
A thin film transistors (TFTs) substrate is structured to maintain as constant across the area of the substrate a kickback voltage due to Miller capacitance between the drain and gate of each TFT even in the presence of manufacturing induced misalignments between the drain electrodes and corresponding gate lines. Each thin film transistor includes a gate electrode, an active layer formed on the gate electrode so as to overlap the gate electrode, first and second source electrodes respectively connected to first and second data lines each of which crosses the gate line while being insulated from the gate line, and an elongated drain electrode located between the first and second source electrodes and disposed over the gate electrode so as to a crossing length of the drain electrode is larger than an underlying width of the gate electrode such that misalignment induced shifts of the position of the gate electrode relative to the drain electrode does not substantially change overlap area between the two.
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Chai Chong-chul
Hwang Tae-hyung
Kim So-woon
Kim Yeon-joo
Yang Sung-hoon
Innovation Counsel LLP
Samsung Electronics Co,. Ltd.
Tran Minh-Loan T
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