Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2009-07-07
2011-10-11
Ha, Nathan (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE21094
Reexamination Certificate
active
08035110
ABSTRACT:
A thin-film transistor (TFT) substrate has improved electrical properties and reduced appearance defects and a method of fabricating the TFT substrate, are provided. The TFT substrate includes: gate wiring which is formed on a surface of an insulating substrate; oxide active layer patterns which are formed on the gate wiring and include an oxide of a first material; buffer layer patterns which are disposed on the oxide active layer patterns to directly contact the oxide active layer patterns and include a second material; and data wiring which is formed on the buffer layer patterns to insulatedly cross the gate wiring, wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material.
REFERENCES:
patent: 5327001 (1994-07-01), Wakai et al.
patent: 7619244 (2009-11-01), Murakami et al.
patent: 7786494 (2010-08-01), Lee et al.
patent: 2004/0263746 (2004-12-01), Cho et al.
patent: 2007/0152219 (2007-07-01), Lim
patent: 2007/0262315 (2007-11-01), Lee et al.
patent: 2008/0108226 (2008-05-01), Oh et al.
patent: 2008/0277658 (2008-11-01), Lee et al.
patent: 2009/0023254 (2009-01-01), Lim et al.
patent: 2009/0039354 (2009-02-01), Wang et al.
patent: 2009/0141207 (2009-06-01), Um et al.
patent: 2009/0153056 (2009-06-01), Chen et al.
patent: 2009/0180045 (2009-07-01), Yoon et al.
patent: 2010/0001284 (2010-01-01), Cho et al.
patent: 2010/0022055 (2010-01-01), Bae et al.
patent: 2010/0051942 (2010-03-01), Ryu et al.
patent: 2010/0159624 (2010-06-01), Cho et al.
patent: 2007-096055 (2007-04-01), None
patent: 1020080043092 (2008-05-01), None
patent: 1020080048936 (2008-06-01), None
Jeong Chang-Oh
Kim Do-Hyun
Kim Ki-Won
Lee Dong-Hoon
Yun Pil-Sang
Cantor & Colburn LLP
Ha Nathan
Samsung Electronics Co,. Ltd.
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