Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-12-23
2000-06-13
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257347, 257348, 257349, 257350, 257351, 257352, 257353, 257354, 349 42, 349 43, 349147, H01L 2968
Patent
active
060752572
ABSTRACT:
A liquid crystal display (LCD) includes silicide-preventing regions between an amorphous silicon layer and source and drain regions. The silicide-preventing regions, which may be thin oxide regions, act as silicide barriers without degrading the contact resistance characteristics. The doped amorphous silicon layer and the amorphous layer may then be uniformly etched by reducing and preferably preventing the formation of silicide when forming the source and drain electrodes.
Abraham Fetsum
Samsung Electronics Co,. Ltd.
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