Thin film transistor substrate for a liquid crystal display havi

Details Thin film transistor substrate for a liquid crystal display havi Thin film transistor substrate for a liquid crystal display havi

1998-05-29

1999-11-23

Dang, Hung Xuan

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

349147, 257 59, G02F 1136, G02F 11343

Patent

active

059909862

ABSTRACT:
Gate wire is formed on a transparent glass substrate, and a gate insulating film, an amorphous silicon layer, a doped amorphous silicon layer and Cr layer are deposited in sequence. After patterning the Cr layer, the doped amorphous silicon layer and the amorphous silicon layer, an ITO (indium-tin-oxide) layer is deposited and patterned, and then the exposed portions of the Cr layer and of the doped amorphous silicon layer are removed. A passivation film is deposited and patterned to form a plurality of contact holes over the ITO layer, and then a conductive layer is deposited and patterned to form a data line which is connected to the ITO layer through the contact holes.

REFERENCES:
patent: 5805250 (1998-09-01), Hatano et al.
patent: 5814836 (1998-09-01), Hyun

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