Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2008-08-25
2011-10-11
Landau, Matthew (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C438S104000, C257SE29296
Reexamination Certificate
active
08035100
ABSTRACT:
A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm3to about 0.3 mole/cm3of a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cm3to about 0.3 mole/cm3of 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.
REFERENCES:
patent: 2009/0072232 (2009-03-01), Hayashi et al.
patent: 2007-250982 (2007-09-01), None
Machine translation of JP2007-250982A, obtained Nov. 6, 2010.
Choi Jae-Ho
Choi Yong-Mo
Kim Byoung-June
Kim Sung-Ryul
Lee Czang-Ho
Cantor & Colburn LLP
Hall Jessica
Landau Matthew
Samsung Electronics Co,. Ltd.
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