Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-01-23
2011-10-04
Hoang, Quoc (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27093
Reexamination Certificate
active
08030696
ABSTRACT:
A thin film transistor substrate includes: a substrate; a thin film transistor and a capacitor formed on the substrate; and a protective film for protecting an electrode on a back surface side of the capacitor when an electrode on a front surface side of the capacitor is cut by irradiation with laser light, the protective film being disposed at such a position as to enclose a corner part of the electrode on the front surface side between the electrode on the front surface side and the electrode on the back surface side of the capacitor.
REFERENCES:
patent: 6822701 (2004-11-01), Kasahara et al.
patent: 7763942 (2010-07-01), Chen et al.
patent: 2962932 (1999-08-01), None
patent: 3462792 (2003-08-01), None
Hoang Quoc
Rader & Fishman & Grauer, PLLC
Sony Corporation
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