Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2011-03-08
2011-03-08
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C349S043000, C257SE21679
Reexamination Certificate
active
07901965
ABSTRACT:
A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.
REFERENCES:
patent: 2004/0051823 (2004-03-01), Choi
patent: 2004/0246409 (2004-12-01), Jeon et al.
patent: 2005/0112790 (2005-05-01), Lan et al.
patent: 2007/0222908 (2007-09-01), Kim et al.
patent: 2005-128555 (2004-10-01), None
patent: 2005-065703 (2003-12-01), None
Choung Jong Hyun
Hong Sun Young
Kim Bong Kyun
Lee Byeong Jin
Park Hong Sick
Garber Charles D
Innovation Counsel LLP
Isaac Stanetta D
Samsung Electronics Co,. Ltd.
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