Thin-film transistor substrate and method of fabricating the...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S670000, C438S951000, C257SE21414, C257SE21025

Reexamination Certificate

active

07858412

ABSTRACT:
A thin-film transistor (“TFT”) substrate and a method of fabricating the same include: an insulating substrate; gate wiring which is disposed on the insulating substrate and includes a gate line and a gate electrode; a semiconductor pattern which is disposed on the gate electrode; data wiring which is disposed on the semiconductor pattern and includes a data line, a source electrode, and a drain electrode; a passivation layer which includes a first sub-passivation layer and a second sub-passivation layer deposited on the data wiring; and a pixel electrode which is electrically connected to the drain electrode through a contact hole disposed in the passivation layer, wherein the second sub-passivation layer has a lower density than the first sub-passivation layer.

REFERENCES:
patent: 6933989 (2005-08-01), Oke et al.
patent: 7130003 (2006-10-01), Park et al.
patent: 7435629 (2008-10-01), Youn
patent: 7728331 (2010-06-01), Kim et al.
patent: 2009/0047749 (2009-02-01), Lin et al.
patent: 2009/0290083 (2009-11-01), Lim et al.
patent: 2010/0001275 (2010-01-01), Kim et al.
patent: 2010/0197058 (2010-08-01), Kim et al.

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