Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-05-12
2009-10-20
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51006
Reexamination Certificate
active
07605395
ABSTRACT:
A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.
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Korean Intellectual property Office Notice of Official Action; Application No. 10-2005-0067517; Date: Sep. 25, 2006.
Choi Tae-young
Hong Mun-pyo
Kim Bo-sung
Kim Soo-jin
Kim Young-min
Cantor & Colburn LLP
Kuo W. Wendy
Samsung Electronics Co,. Ltd.
Tran Minh-Loan T
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