Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2011-01-04
2011-01-04
Purvis, Sue (Department: 2826)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S151000, C438S591000, C257SE21411, C257SE51006
Reexamination Certificate
active
07863086
ABSTRACT:
A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.
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Choi Tae-Young
Hong Mun-Pyo
Kim Bo-sung
Kim Soo-Jin
Kim Young-Min
Cantor & Colburn LLP
Kuo W. Wendy
Purvis Sue
Samsung Electronics Co,. Ltd.
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