Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-26
2008-03-25
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S157000, C257SE29287, C257S347000
Reexamination Certificate
active
07348631
ABSTRACT:
A thin film transistor substrate is provided whose structure allows for the formation of (i) a thick gate insulating film, (ii) a high pressure resistance TFT having a LDD region of a GOLD structure, and (iii) a low voltage TFT having a thin gate insulating film, with less number of production steps.
REFERENCES:
patent: 6737672 (2004-05-01), Hara et al.
patent: 6777716 (2004-08-01), Yamazaki et al.
patent: 6964891 (2005-11-01), Hotta
patent: 2003/0025127 (2003-02-01), Yanai et al.
patent: 2004/0253771 (2004-12-01), Yamazaki et al.
patent: 2005/0127412 (2005-06-01), Cohen et al.
patent: 2006/0006425 (2006-01-01), Hotta
patent: 07-249778 (1995-09-01), None
patent: 2000-299469 (2000-10-01), None
patent: 2003-45892 (2003-02-01), None
patent: 2003-086505 (2003-03-01), None
patent: 2004-228480 (2004-08-01), None
Booth Richard A.
Keating & Bennett LLP
Sharp Kabushiki Kaisha
LandOfFree
Thin film transistor substrate and manufacturing method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor substrate and manufacturing method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor substrate and manufacturing method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3963534