Thin film transistor substrate and fabricating method thereof

Details Thin film transistor substrate and fabricating method thereof Thin film transistor substrate and fabricating method thereof

2007-12-26

2010-10-19

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S160000, C257S059000, C257SE21414, C257SE29151, C349S067000, C349S113000, C349S114000

Reexamination Certificate

active

07816192

ABSTRACT:
The present invention relates to a thin film transistor substrate and a fabricating method thereof. The thin film transistor according to one embodiment of the present invention comprises: a gate wire and a data wire formed to cross each other on an insulating substrate and define a pixel area; a thin film transistor formed on the intersection of the gate wire and the data wire; an inorganic insulating layer covering the thin film transistor and having a surface that a prominence and depression pattern formed on; and a reflective layer provided on the prominence and depression pattern. Thus, the present invention provides a thin film transistor substrate and a fabricating method thereof, which reduce the time required in the process and enhance the productivity.

REFERENCES:
patent: 6291146 (2001-09-01), Chang et al.
patent: 6522375 (2003-02-01), Jang et al.
patent: 2002/0113927 (2002-08-01), Ha et al.
patent: 2003/0142247 (2003-07-01), Nishiyama et al.
patent: 2004/0125289 (2004-07-01), Nam et al.
patent: 2007/0040971 (2007-02-01), Maekawa et al.
patent: 2007/0153170 (2007-07-01), Yao

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