Thin film transistor substrate and fabricating method thereof

Details Thin film transistor substrate and fabricating method thereof Thin film transistor substrate and fabricating method thereof

2007-08-28

2007-08-28

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S149000, C257S316000, C257S347000, C257S350000

Reexamination Certificate

active

11152960

ABSTRACT:
A thin film transistor substrate and a fabricating method thereof wherein a contacting size between an electrode and an active layer can be reduced to provide a small and light panel. In the thin film transistor substrate, a conductive layer is formed on the substrate. A first insulating layer for insulating the conductive layer overlies the conductive layer. A second insulating layer this is different from the first insulating layer overlies the first insulating layer. A third insulating layer overlies the second insulating layer. A contact through the first, second, and third insulating layers exposes a portion of the conductive layer and has a trapezoidal section. An electrode is connected to the conductive layer and overlies a portion of an inclined face of the contact hole. The inclined face of the contact hole includes a protrusion formed by a portion of the second insulating layer and creates an overhang structure.

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Office Action dated May 4, 2006 for corresponding Korean Patent Application No. 10-2004-0100071.

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