Thin film transistor substrate and fabricating method thereof

Details Thin film transistor substrate and fabricating method thereof Thin film transistor substrate and fabricating method thereof

2008-03-11

2008-03-11

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S106000, C349S141000

Reexamination Certificate

active

07341895

ABSTRACT:
A thin film transistor substrate and a fabricating method thereof that are capable of improving an aperture ratio. A gate electrode on that substrate has an inclined head and a concave neck.

REFERENCES:
patent: 5398127 (1995-03-01), Kubota et al.
patent: 5854665 (1998-12-01), Iba
patent: 6064451 (2000-05-01), Oh et al.
patent: 6088078 (2000-07-01), Kim et al.
patent: 6091472 (2000-07-01), Itoh et al.
patent: 6115087 (2000-09-01), Ohi
patent: 6128061 (2000-10-01), Lee et al.
patent: 6154266 (2000-11-01), Okamoto et al.
patent: 6211937 (2001-04-01), Miyachi et al.
patent: 6256081 (2001-07-01), Lee et al.
patent: 6344889 (2002-02-01), Hasegawa et al.
patent: 6466290 (2002-10-01), Kim et al.
patent: 6738110 (2004-05-01), Lee
patent: 6906770 (2005-06-01), Kim et al.
patent: 6921917 (2005-07-01), Choi et al.
patent: 6933997 (2005-08-01), Kim
patent: 6946680 (2005-09-01), Jang
patent: 6975367 (2005-12-01), Lim
patent: 2002/0084459 (2002-07-01), Choi et al
patent: 2003/0117560 (2003-06-01), Yang et al
patent: 2004/0031991 (2004-02-01), Jang
patent: 2004/0066472 (2004-04-01), Lim
patent: 2004/0125260 (2004-07-01), Kim et al.
patent: 2004/0125302 (2004-07-01), Kim
patent: 2005/0095757 (2005-05-01), Choi et al.
patent: 2006/0001027 (2006-01-01), Jang

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