Thin film transistor structure with insulating mask

Details Thin film transistor structure with insulating mask Thin film transistor structure with insulating mask

1991-11-07

1993-07-27

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 66, 257377, 257347, 257387, H01L 2701, H01L 2901, H01L 2906

Patent

active

052312968

ABSTRACT:
A thin film transistor and method for forming the same are disclosed. The transistor comprises a gate conductor (14) and a gate insulator (16). A semiconductor channel layer (18) is formed adjacent the gate insulator (16). A mask block (22) is formed covering a channel region (30) in the channel layer (18). A source region (26) and a drain region (28) are formed in the channel layer (18) adjacent opposite ends of the mask block (22). Conductive bodies (32) and (34) are formed in contact with source region (26) and drain region (28), respectively. Electric contacts (42) and (44) are then formed in contact with conductive bodies (32) and (34), respectively.

REFERENCES:
patent: 4396930 (1983-08-01), Mizutani
"Self-Aligned Contact Schemes for Source-Drains in Submicron Devices", W. T. Lynch, IDEM 1987, pp. 354-356.

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